• 库存 1900
定价:
  • 1000 3.65
  • 2000 3.42

技术参数

  • Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Mounting Type Surface Mount
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 750pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 15A
  • Supplier Device Package LPTL
  • Operating Temperature - Junction 175°C (Max)
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.5 V @ 15 A
  • Current - Reverse Leakage @ Vr 75 µA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


GAN TRANS 200V 8MOHM BUMPED DIE

库存: 10318

  • 2500: 3.39

SILICON CARBIDE MOSFET PG-TO263-

库存: 1500

  • 1000: 6.95

MOSFET N-CH 300V 72A TO263AA

库存: 1500

  • 1: 9.84
  • 50: 7.86
  • 100: 7.03
  • 500: 6.2
  • 1000: 5.58

DIODE SIL CARB 650V 15A TO263AB

库存: 5950

  • 1000: 3.65
  • 2000: 3.42

DIODE SIL CARBIDE 650V 20A LPTL

库存: 2320

  • 1000: 5.24
  • 2000: 4.91

DIODE SIL CARB 650V 20A TO220FM

库存: 1793

  • 1: 9.46
  • 50: 7.55
  • 100: 6.76
  • 500: 5.96
  • 1000: 5.37

MOSFET N-CH 650V 65A TO263

库存: 6123

  • 800: 12.64
Top