- 产品型号 TC58BYG2S0HBAI4
- 品牌 Toshiba Memory America, Inc. (Kioxia America, Inc.)
- RoHS Yes
- 描述 IC FLASH 4G PARALLEL 63TFBGA
- 分类 记忆
-
PDF
- 库存 1587
定价:
- 1 5.07
- 10 4.63
- 25 4.54
- 40 4.5
- 210 4.04
- 420 4.03
- 630 3.77
- 1050 3.61
技术参数
- Package / Case 63-VFBGA
- Mounting Type Surface Mount
- Memory Size 4Gbit
- Memory Type Non-Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 1.7V ~ 1.95V
- Technology FLASH - NAND (SLC)
- Memory Format FLASH
- Supplier Device Package 63-TFBGA (9x11)
- Write Cycle Time - Word, Page 25ns
- Memory Interface Parallel
- Access Time 25 ns
- Memory Organization 512M x 8
- DigiKey Programmable Not Verified
- ECCN 3A991B1A
- HTSUS 8542.32.0051
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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IC FLASH 4GBIT PARALLEL 63VFBGA
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IC FLASH 512MBIT PAR 24FBGA
库存: 1904
- 1: 12.86
- 10: 11.91
- 25: 11.64
- 40: 11.58
- 80: 10.19
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- 676: 9.59
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FLASH - NOR MEMORY IC 512MB (64M
库存: 8505
- 1: 7.46
