技术参数
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 336pF @ 1V, 1MHz
- Current - Average Rectified (Io) 8A
- Supplier Device Package TO-220-2
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.6 V @ 8 A
- Current - Reverse Leakage @ Vr 20 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Affected
- RoHS Status ROHS3 Compliant
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