技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
• Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
• Power Dissipation (Max) 830mW (Ta)
• Vgs(th) (Max) @ Id 3V @ 1mA
• Supplier Device Package TO-92-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant