技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max) 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V
• Frequency - Transition 200MHz
• Supplier Device Package TO-226-3
• Current - Collector (Ic) (Max) 1.5 A
• Voltage - Collector Emitter Breakdown (Max) 100 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected