技术参数

• Package / Case TOP-3F
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 40mA, 200mA
• Current - Collector Cutoff (Max) 50µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 500mA, 5V
• Frequency - Transition 4MHz
• Supplier Device Package TOP-3F-A1
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 800 V
• Power - Max 3 W
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)