- 产品型号 SIR626LDP-T1-RE3
- 品牌 Vishay / Siliconix
- RoHS Yes
- 描述 MOSFET N-CH 60V 45.6A/186A PPAK
- 分类 单 FET、MOSFET
-
PDF
- 库存 10470
定价:
- 3000 0.78
- 6000 0.75
- 9000 0.73
技术参数
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 186A (Tc)
- Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
- Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
