技术参数

• Package / Case TO-220-2 Full Pack, Isolated Tab
• Mounting Type Through Hole
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 260pF @ 1V, 1MHz
• Current - Average Rectified (Io) 8A
• Supplier Device Package TO-220F
• Operating Temperature - Junction 175°C (Max)
• Voltage - DC Reverse (Vr) (Max) 650 V
• Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
• Current - Reverse Leakage @ Vr 230 µA @ 650 V
• ECCN EAR99
• HTSUS 8541.10.0080
• Moisture Sensitivity Level (MSL) 1 (Unlimited)