- 产品型号 NXPSC04650B6J
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS No
- 描述 DIODE SIL CARBIDE 650V 4A D2PAK
- 分类 单二极管
-
PDF
- 库存 4630
定价:
- 800 1.5
- 1600 1.28
- 2400 1.21
- 5600 1.17
技术参数
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 130pF @ 1V, 1MHz
- Current - Average Rectified (Io) 4A
- Supplier Device Package D2PAK
- Operating Temperature - Junction 175°C (Max)
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 170 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
