技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 10V
• Frequency - Transition 200MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 350 V
• Power - Max 625 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant