- 产品型号 SISS22DN-T1-GE3
- 品牌 Vishay / Siliconix
- RoHS Yes
- 描述 MOSFET N-CH 60V 25A/90.6A PPAK
- 分类 单 FET、MOSFET
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PDF
- 库存 7497
定价:
- 3000 0.67
- 6000 0.65
- 9000 0.63
技术参数
- Package / Case PowerPAK® 1212-8S
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 25A (Ta), 90.6A (Tc)
- Rds On (Max) @ Id, Vgs 4mOhm @ 15A, 10V
- Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
- Vgs(th) (Max) @ Id 3.6V @ 250µA
- Supplier Device Package PowerPAK® 1212-8S
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
