• 库存 2010
定价:
  • 1 9.81
  • 50 7.83
  • 100 7.01
  • 500 6.18
  • 1000 5.56

技术参数

  • Package / Case TO-220-2
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 1000pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 20A
  • Supplier Device Package TO-220ACP
  • Operating Temperature - Junction 175°C (Max)
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Current - Reverse Leakage @ Vr 100 µA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


DIODE SIL CARBIDE 650V 20A LPTL

库存: 2320

  • 1000: 5.24
  • 2000: 4.91

DIODE SIL CARB 650V 20A TO220FM

库存: 1793

  • 1: 9.46
  • 50: 7.55
  • 100: 6.76
  • 500: 5.96
  • 1000: 5.37
Top