- 产品型号 IPP60R099CPXKSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 MOSFET N-CH 650V 31A TO220-3
- 分类 单 FET、MOSFET
-
PDF
- 库存 2539
定价:
- 1 8.16
- 50 6.52
- 100 5.83
- 500 5.14
- 1000 4.63
- 2000 4.34
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31A (Tc)
- Rds On (Max) @ Id, Vgs 99mOhm @ 18A, 10V
- Power Dissipation (Max) 255W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 1.2mA
- Supplier Device Package PG-TO220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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