技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
• Frequency - Transition 100MHz
• Supplier Device Package Die
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 80 V
• ECCN EAR99
• HTSUS 8541.29.0040
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant