- 产品型号 TC58BYG0S3HBAI4
- 品牌 Toshiba Memory America, Inc. (Kioxia America, Inc.)
- RoHS Yes
- 描述 IC FLASH 1GBIT 63TFBGA
- 分类 记忆
-
PDF
- 库存 1518
定价:
- 1 3.69
- 10 3.32
- 25 3.14
- 210 2.72
- 420 2.58
- 630 2.31
- 1050 1.95
- 2520 1.85
- 5040 1.78
技术参数
- Package / Case 63-VFBGA
- Mounting Type Surface Mount
- Memory Size 1Gbit
- Memory Type Non-Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 1.7V ~ 1.95V
- Technology FLASH - NAND (SLC)
- Memory Format FLASH
- Supplier Device Package 63-TFBGA (9x11)
- Write Cycle Time - Word, Page 25ns
- Memory Organization 128M x 8
- DigiKey Programmable Not Verified
- ECCN 3A991B1A
- HTSUS 8542.32.0051
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC FLASH 1GBIT PARALLEL 63TFBGA
库存: 1627
- 1: 3.26
- 10: 2.93
- 25: 2.88
- 40: 2.88
- 210: 2.57
- 420: 2.49
- 630: 2.48
- 1050: 2.31
