- 产品型号 FCP165N65S3
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 MOSFET N-CH 650V 19A TO220-3
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Rds On (Max) @ Id, Vgs 165mOhm @ 9.5A, 10V
- Power Dissipation (Max) 154W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 1.9mA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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