- 产品型号 IRF630NPBF
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 MOSFET N-CH 200V 9.3A TO220AB
- 分类 单 FET、MOSFET
-
PDF
- 库存 9531
- 1 1.13
- 50 0.91
- 100 0.72
- 500 0.61
- 1000 0.5
- 2000 0.47
- 5000 0.44
- 10000 0.42
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
- Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V
- Power Dissipation (Max) 82W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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