技术参数

• Package / Case 3-XFDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
• Rds On (Max) @ Id, Vgs 1.9Ohm @ 100mA, 4.5V
• Power Dissipation (Max) 820mW (Ta)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package X2-DFN0604-3
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 0.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 28.7 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant