技术参数

• Package / Case TO-213AA, TO-66-2
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature -55°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
• Current - Collector Cutoff (Max) 500µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A, 3V
• Supplier Device Package TO-66 (TO-213AA)
• Grade Military
• Current - Collector (Ic) (Max) 8 A
• Voltage - Collector Emitter Breakdown (Max) 80 V
• Power - Max 75 W
• Qualification MIL-PRF-19500/539
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant