- 产品型号 BYV30JT-600PQ
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS No
- 描述 DIODE GEN PURP 600V 30A TO3P
- 分类 单二极管
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PDF
- 库存 5340
定价:
- 1 1.97
- 10 1.63
- 480 1.1
- 960 0.93
- 2400 0.89
- 5280 0.85
- 10080 0.83
技术参数
- Package / Case TO-3P-3, SC-65-3
- Mounting Type Through Hole
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 65 ns
- Technology Standard
- Current - Average Rectified (Io) 30A
- Supplier Device Package TO-3P
- Operating Temperature - Junction 175°C (Max)
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.8 V @ 30 A
- Current - Reverse Leakage @ Vr 10 µA @ 600 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
