- 产品型号 BYV30B-600PJ
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS No
- 描述 DIODE GEN PURP 600V 30A D2PAK
- 分类 单二极管
-
PDF
- 库存 1500
定价:
- 1 1.07
技术参数
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 75 ns
- Technology Standard
- Current - Average Rectified (Io) 30A
- Supplier Device Package D2PAK
- Operating Temperature - Junction 175°C (Max)
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.55 V @ 30 A
- Current - Reverse Leakage @ Vr 10 µA @ 600 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
