- 产品型号 IPU80R900P7AKMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 MOSFET N-CH 800V 6A TO251-3
- 分类 单 FET、MOSFET
-
PDF
- 库存 3000
定价:
- 1 1.33
- 10 1.09
- 100 0.85
- 500 0.72
- 1500 0.58
- 3000 0.55
- 6000 0.52
- 10500 0.5
技术参数
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 110µA
- Supplier Device Package PG-TO251-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
