技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 800mV @ 100µA, 1mA
• Current - Collector Cutoff (Max) 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 1mA, 5V
• Frequency - Transition 850MHz
• Supplier Device Package Die
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 15 V
• Power - Max 300 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected