技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Tj)
• Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id 4V @ 244µA
• Supplier Device Package Sawn on foil
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Drain to Source Voltage (Vdss) 120 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant