技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 3A
• Current - Collector Cutoff (Max) 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
• Frequency - Transition 100MHz
• Supplier Device Package TO-92AP
• Current - Collector (Ic) (Max) 3 A
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant