技术参数

• Package / Case SOT-23-5 Thin, TSOT-23-5
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
• Rds On (Max) @ Id, Vgs 200mOhm @ 1.5A, 4.5V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 1.25W (Ta)
• Vgs(th) (Max) @ Id 2V @ 1mA
• Supplier Device Package TSMT5
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 4.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant