技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TA)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 840mA (Tc)
• Rds On (Max) @ Id, Vgs 1.77Ohm @ 500mA, 10V
• Power Dissipation (Max) 3W (Tc)
• Vgs(th) (Max) @ Id 3.5V @ 250µA
• Supplier Device Package SOT-23-3 (TO-236)
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 50 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant