• 库存 1500
定价:
  • 1 13.5
  • 30 10.93
  • 120 10.28
  • 510 9.32
  • 1020 8.55

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 1140pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 40A
  • Supplier Device Package PG-TO247-3
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.7 V @ 40 A
  • Current - Reverse Leakage @ Vr 220 µA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


DIODE SIL CARB 650V 50A TO247-2

库存: 2167

  • 1: 14.92
  • 30: 12.07
  • 120: 11.36
  • 510: 10.3
  • 1020: 9.45

DIODE SIL CARB 650V 41A TO220-2

库存: 3521

  • 1: 7.66
  • 50: 6.11
  • 100: 5.47
  • 500: 4.82
  • 1000: 4.34
  • 2000: 4.07

DIODE SIL CARB 1.2KV 110A TO247

库存: 2219

  • 1: 21.42
  • 30: 17.76
  • 120: 16.65
  • 510: 14.21

MOSFET N-CH 650V 13A TO252-3

库存: 5156

  • 2500: 1.33
  • 5000: 1.27

SILICON CARBIDE MOSFET, NCHANNEL

库存: 1633

  • 1: 27.17
  • 30: 22.53
  • 120: 21.12
  • 510: 18.02

SICFET N-CH 1200V 31A TO247N

库存: 1500

  • 1: 20.3
  • 30: 16.83
  • 120: 15.78
  • 510: 13.47
Top