- 产品型号 IDH08G65C5XKSA2
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 DIODE SIL CARB 650V 8A TO220-2-1
- 分类 单二极管
-
PDF
- 库存 1500
定价:
- 1 3.37
- 50 2.67
- 100 2.29
- 500 2.03
- 1000 1.74
- 2000 1.64
- 5000 1.57
技术参数
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 250pF @ 1V, 1MHz
- Current - Average Rectified (Io) 8A
- Supplier Device Package PG-TO220-2-1
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
- Current - Reverse Leakage @ Vr 140 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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