- 产品型号 IDH06G65C5XKSA2
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 DIODE SIL CARB 650V 6A TO220-2-1
- 分类 单二极管
-
PDF
- 库存 2816
定价:
- 1 2.8
- 50 2.22
- 100 1.9
- 500 1.69
- 1000 1.45
- 2000 1.37
- 5000 1.31
技术参数
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 190pF @ 1V, 1MHz
- Current - Average Rectified (Io) 6A
- Supplier Device Package PG-TO220-2-1
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
- Current - Reverse Leakage @ Vr 110 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
DIODE SIL CARB 600V 6A TO252-3
库存: 11315
- 2500: 1.53
DIODE SIL CARB 650V 16A TO220-2
库存: 2465
- 1: 2.69
- 50: 2.13
- 100: 1.83
- 500: 1.62
- 1000: 1.39
- 2000: 1.31
- 5000: 1.26
