- 产品型号 SIHJ10N60E-T1-GE3
- 品牌 Vishay / Siliconix
- RoHS Yes
- 描述 MOSFET N-CH 600V 10A PPAK SO-8
- 分类 单 FET、MOSFET
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PDF
- 库存 2717
定价:
- 3000 1.27
- 6000 1.22
技术参数
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V
- Power Dissipation (Max) 89W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 784 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status Vendor Undefined
- RoHS Status ROHS3 Compliant
