技术参数

• Package / Case TO-222AA, TO-105-3 Domed
• Mounting Type Through Hole
• Transistor Type PNP
• Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 1V
• Frequency - Transition 100MHz
• Supplier Device Package TO-105
• Voltage - Collector Emitter Breakdown (Max) 20 V
• ECCN OBSOLETE
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected