技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 17A (Tc)
• Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 8V
• Power Dissipation (Max) 96W (Tc)
• Vgs(th) (Max) @ Id 2.6V @ 500µA
• Supplier Device Package TO-220AB
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±18V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 480 V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant