技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 20.7A (Tc)
• Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
• Power Dissipation (Max) 208W (Tc)
• Vgs(th) (Max) @ Id 3.9V @ 1mA
• Supplier Device Package PG-TO220-3-1
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected