技术参数

• Package / Case TO-251-3 Short Leads, IPak, TO-251AA
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 8.83A (Ta)
• Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V
• Power Dissipation (Max) 42W (Tc)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package PG-TO251-3
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected