技术参数

• Package / Case TO-251-3 Short Leads, IPak, TO-251AA
• Mounting Type Through Hole
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
• Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V
• Power Dissipation (Max) 49W (Tc)
• Vgs(th) (Max) @ Id 3.5V @ 90µA
• Supplier Device Package PG-TO251-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant