技术参数

• Package / Case DirectFET™ Isometric L8
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 375A (Tc)
• Rds On (Max) @ Id, Vgs 0.59mOhm @ 195A, 10V
• Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package DirectFET™ Isometric L8
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 330 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 20082 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant