- 产品型号 SE10FGHM3/H
- 品牌 Vishay General Semiconductor – Diodes Division
- RoHS Yes
- 描述 DIODE GEN PURP 400V 1A DO219AB
- 分类 单二极管
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PDF
- 库存 25218
定价:
- 3000 0.1
- 6000 0.09
- 9000 0.08
- 30000 0.08
- 75000 0.07
- 150000 0.07
技术参数
- Package / Case DO-219AB
- Mounting Type Surface Mount
- Speed Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 780 ns
- Technology Standard
- Capacitance @ Vr, F 7.5pF @ 4V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DO-219AB (SMF)
- Operating Temperature - Junction -55°C ~ 175°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 400 V
- Voltage - Forward (Vf) (Max) @ If 1.05 V @ 1 A
- Current - Reverse Leakage @ Vr 5 µA @ 400 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
