- 产品型号 CSD18535KCS
- 品牌 Texas Instruments
- RoHS Yes
- 描述 MOSFET N-CH 60V 200A TO220-3
- 分类 单 FET、MOSFET
- 库存 3437
- 1 2.94
- 50 2.33
- 100 2
- 500 1.78
- 1000 1.52
- 2000 1.43
- 5000 1.38
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200A (Ta)
- Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
- Power Dissipation (Max) 300W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6620 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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