• 库存 2476
定价:
  • 1 4.37
  • 50 3.46
  • 100 2.97
  • 500 2.64
  • 1000 2.26
  • 2000 2.13

技术参数

  • Package / Case TO-220-2
  • Mounting Type Through Hole
  • Speed Fast Recovery =< 500ns, > 200mA (Io)
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 600pF @ 0V, 1MHz
  • Current - Average Rectified (Io) 12A
  • Supplier Device Package TO-220AC
  • Operating Temperature - Junction -40°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.75 V @ 12 A
  • Current - Reverse Leakage @ Vr 120 µA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


DIODE SIL CARB 650V 12A TO220-1

库存: 2014

  • 1: 5.05
  • 50: 4
  • 100: 3.43
  • 500: 3.05
  • 1000: 2.61
  • 2000: 2.46
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