技术参数

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
• Rds On (Max) @ Id, Vgs 85mOhm @ 2.9A, 4.5V
• Power Dissipation (Max) 317mW (Ta), 8.33W (Tc)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package DFN1010D-3
• Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 608 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant