技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 60A (Ta)
• Rds On (Max) @ Id, Vgs 1.3mOhm @ 40A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 20mA
• Supplier Device Package Die
• Drain to Source Voltage (Vdss) 30 V
• Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0040
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant