- 产品型号 GA50JT17-247
- 品牌 GeneSiC Semiconductor
- RoHS No
- 描述 TRANS SJT 1700V 100A TO247
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 50A
- Power Dissipation (Max) 583W (Tc)
- Supplier Device Package TO-247
- Drain to Source Voltage (Vdss) 1700 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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