• 库存 15850
定价:
  • 1 10.96
  • 30 8.75
  • 120 7.83
  • 510 6.91
  • 1020 6.22

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Rds On (Max) @ Id, Vgs 370mOhm @ 6A, 20V
  • Power Dissipation (Max) 62.5W (Tc)
  • Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +25V, -10V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 20.4 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 259 pF @ 1000 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

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