技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 215mA (Ta)
• Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V
• Power Dissipation (Max) 740mW (Ta)
• Vgs(th) (Max) @ Id 2V @ 1mA
• Supplier Device Package TO-92-3
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 250 V
• Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant