技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 175mA (Tj)
• Rds On (Max) @ Id, Vgs 12Ohm @ 150mA, 0V
• FET Feature Depletion Mode
• Power Dissipation (Max) 740mW (Ta)
• Supplier Device Package TO-92 (TO-226)
• Drive Voltage (Max Rds On, Min Rds On) 0V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 300 V
• Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant