- 产品型号 IS61WV5128EDBLL-10BLI
- 品牌 ISSI (Integrated Silicon Solution, Inc.)
- RoHS Yes
- 描述 IC SRAM 4MBIT PARALLEL 36TFBGA
- 分类 记忆
-
PDF
- 库存 1976
定价:
- 1 4.01
- 10 3.64
- 25 3.56
- 40 3.54
- 80 3.17
- 230 3.16
- 480 3.04
- 960 2.89
技术参数
- Package / Case 36-TFBGA
- Mounting Type Surface Mount
- Memory Size 4Mbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 2.4V ~ 3.6V
- Technology SRAM - Asynchronous
- Memory Format SRAM
- Supplier Device Package 36-TFBGA (6x8)
- Write Cycle Time - Word, Page 10ns
- Memory Interface Parallel
- Access Time 10 ns
- Memory Organization 512K x 8
- DigiKey Programmable Not Verified
- ECCN 3A991B2A
- HTSUS 8542.32.0041
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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- 1: 4.33
- 10: 3.93
- 25: 3.84
- 40: 3.82
- 80: 3.43
- 230: 3.42
- 480: 3.29
- 960: 3.13
IC SRAM 4MBIT PARALLEL 36TFBGA
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- 2500: 2.86
IC BATT PROT LI-ION 2CEL SOT23-6
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- 6000: 0.86
