- 产品型号 W9812G6KH-6I
- 品牌 Winbond Electronics Corporation
- RoHS Yes
- 描述 IC DRAM 128MBIT PAR 54TSOP II
- 分类 记忆
-
PDF
- 库存 1608
- 1 2.22
- 10 2
- 25 1.97
- 40 1.96
- 108 1.75
- 324 1.7
- 540 1.69
- 972 1.57
- 4968 1.43
技术参数
- Package / Case 54-TSOP (0.400", 10.16mm Width)
- Mounting Type Surface Mount
- Memory Size 128Mbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 3V ~ 3.6V
- Technology SDRAM
- Clock Frequency 166 MHz
- Memory Format DRAM
- Supplier Device Package 54-TSOP II
- Memory Interface Parallel
- Access Time 5 ns
- Memory Organization 8M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0002
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
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库存: 2281
- 1: 6.24
- 10: 5.69
- 25: 5.58
- 40: 5.54
- 80: 4.97
- 230: 4.96
- 440: 4.64
- 1080: 4.45
IC DRAM 128MBIT PAR 54TSOP II
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- 2000: 3.73
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- 1: 20.3
- 10: 18.66
- 25: 17.88
- 119: 15.76
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IC DRAM 128MBIT LVTTL 54TSOP II
库存: 1500
- 1: 2.31
- 10: 2.08
- 25: 2.05
- 40: 2.04
- 108: 1.83
- 324: 1.77
- 540: 1.76
- 972: 1.64
- 4968: 1.48
IC DRAM 128MBIT PAR 54TSOP II
库存: 1500
- 1: 1.89
- 10: 1.72
- 25: 1.68
- 40: 1.67
- 108: 1.49
- 324: 1.49
- 540: 1.46
- 972: 1.4
- 4968: 1.31
IC DRAM 128MBIT PAR 54TSOP II
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- 1000: 1.47
IC DRAM 128MBIT PAR 54TSOP II
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- 1000: 1.64
- 2000: 1.61
- 3000: 1.59
- 5000: 1.48
IC DRAM 256MBIT PAR 54TSOP II
库存: 1500
- 1: 2.83
- 10: 2.55
- 25: 2.51
- 40: 2.5
- 108: 2.23
- 324: 2.16
- 540: 2.15
- 972: 2
- 4968: 1.81
