- 产品型号 MT47H128M8SH-25E IT:M
- 品牌 Micron Technology
- RoHS Yes
- 描述 IC DRAM 1GBIT PARALLEL 60FBGA
- 分类 记忆
-
PDF
- 库存 3018
- 1 4.89
- 10 4.44
- 25 4.34
- 50 4.32
- 100 3.87
- 250 3.86
- 500 3.72
- 1518 3.54
技术参数
- Package / Case 60-TFBGA
- Mounting Type Surface Mount
- Memory Size 1Gbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 95°C (TC)
- Voltage - Supply 1.7V ~ 1.9V
- Technology SDRAM - DDR2
- Clock Frequency 400 MHz
- Memory Format DRAM
- Supplier Device Package 60-FBGA (8x10)
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 400 ps
- Memory Organization 128M x 8
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0032
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC DRAM 1GBIT PARALLEL 60FBGA
库存: 1759
- 1: 6.99
- 10: 6.38
- 25: 6.26
- 40: 6.21
- 80: 5.57
- 264: 5.55
- 528: 5.2
- 1056: 4.98
IC FLASH 16MBIT SPI/QUAD 8SOIC
库存: 1500
- 1: 0.6
- 10: 0.55
- 25: 0.54
- 50: 0.54
- 100: 0.48
- 300: 0.48
- 500: 0.47
- 1000: 0.45
- 5000: 0.41
IC DRAM 1GBIT PARALLEL 60TWBGA
库存: 1506
- 1: 4.6
IC FLASH 128MBIT SPI 133MHZ 16SO
库存: 2138
- 1: 4.03
- 10: 3.66
- 25: 3.58
- 40: 3.56
- 80: 3.19
- 230: 3.18
- 440: 3.06
- 1440: 2.91
IC FLASH 128MBIT SPI 8WPDFN
库存: 3753
- 1: 4.03
- 10: 3.66
- 25: 3.58
- 40: 3.56
- 80: 3.19
- 230: 3.18
- 440: 3.06
- 2940: 2.88
IC DRAM 512MBIT PARALLEL 66TSOP
库存: 2212
- 1: 6.67
- 10: 6.09
- 25: 5.98
- 40: 5.93
- 80: 5.32
- 230: 5.3
- 440: 4.97
- 1080: 4.76
IC DRAM 1GBIT PARALLEL 60FBGA
库存: 1500
- 2000: 3.5
IC DRAM 1GBIT PARALLEL 84FBGA
库存: 5316
- 1: 4.44
- 10: 4.03
- 25: 3.94
- 40: 3.92
- 80: 3.51
- 230: 3.5
- 440: 3.37
- 1368: 3.21
