- 产品型号 FDT1600N10ALZ
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 MOSFET N-CH 100V 5.6A SOT223-4
- 分类 单 FET、MOSFET
-
PDF
- 库存 10967
定价:
- 4000 0.29
- 8000 0.27
- 12000 0.25
- 28000 0.25
技术参数
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
- Rds On (Max) @ Id, Vgs 160mOhm @ 2.8A, 10V
- Power Dissipation (Max) 10.42W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 250µA
- Supplier Device Package SOT-223-4
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 3.77 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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